Research

The central interest of our research group is to employ highest-purity molecular-beam epitaxial (MBE) growth to gain insights into the physics of correlated electrons in systems of reduced dimensionality. In order to provide As- and Sb-based III/V compound semiconductor heterostructures of excellent quality we focus on technical improvements of the MBE system, optimization of the growth parameters, and the development of structural designs tailored to the different experimental requirements.

For more details, see the individual project pages.